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MT18VDDT6472AG-40BC4

製品説明
仕様・特性

512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT18VDDT6472A – 512MB1 MT18VDDT12872A – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg x 72) and 1GB (128 Meg x 72) • Supports ECC error detection and correction • Vdd = VddQ = +2.5V (-40B: Vdd = VddQ = +2.6V) • Vddspd = +2.3V to +3.6V • 2.5V I/O (SSTL_2-compatible) • Internal, pipelined double data rate (DDR) 2n-prefetch architecture • Bidirectional data strobe (DQS) transmitted/ received with data—that is, source-synchronous data capture • Differential clock inputs (CK and CK#) • Multiple internal device banks for concurrent operation • Dual rank • Selectable burst lengths (BL): 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes: 7.8125µs maximum average periodic refresh interval • Serial presence-detect (SPD) with EEPROM • Selectable CAS latency (CL) for maximum compatibility • Gold edge contacts Table 1: 184-Pin UDIMM (MO-206 R/C B) Options Marking • Operating temperature2 – Commercial (0°C ≤ TA ≤ +70°C) None – Industrial (–40°C ≤ TA ≤ +85°C) I • Package – 184-pin DIMM (standard) G – 184-pin DIMM (Pb-free) Y • Memory clock, speed, CAS latency – 5.0ns (200 MHz), 400 MT/s, CL = 3.0 -40B – 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335 – 7.5ns (133 MHz), 266 MT/s, CL = 2.01 -262 – 7.5ns (133 MHz), 266 MT/s, CL = 2.01 -26A – 7.5ns (133 MHz), 266 MT/s, CL = 2.51 -265 1. Not recommended for new designs. 2. Contact Micron for industrial temperature module offerings. Key Timing Parameters Data Rate (MT/s) tRCD tRP tRC (ns) (ns) (ns) Speed Grade Industry Nomenclature CL = 3 -40B PC3200 400 333 266 15 15 55 -335 PC2700 – 333 266 18 18 60 CL = 2.5 CL = 2 -262 PC2100 – 266 266 15 15 PC2100 – 266 266 20 20 65 -265 PC2100 – 266 200 20 20 1 60 -26A Notes 65 Notes: PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C64_128x72A.fm - Rev. D 9/08 EN tRCD and tRP 1. The values of for -335 modules show 18ns to align with industry specifications; actual DDR SDRAM device specifications are 15ns. 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Draft 9/ 9/ 2008 PCB height: 31.75mm (1.25in)

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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