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K6R1016V1C-TC15
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. 1.1. Delete Preliminary. 1.2. Changed DC characteristics. Item ICC 12ns 15ns 20ns Sep. 7. 1998 Final Sep. 17. 1998 Final Nov. 5. 1998 Final Dec. 10. 1998 Final Mar. 2. 1999 Final Previous 85mA 83mA 80mA Rev. 2.0 Added 48-fine pitch BGA. Rev. 2.1 Changed 95mA 93mA 90mA Changed device part name for FP-BGA. Item Previous Symbol Z ex) K6R1016V1C-Z -> K6R1016V1C-F Rev. 2.2 Rev. 3.0 Changed device ball name for FP-BGA. Previous I/O1 ~ I/O8 I/O9 ~ I/O16 Changed F Changed I/O9 ~ I/O16 I/O1 ~ I/O8 1. Added 10ns speed for FP-BGA only. 2. Changed Standby Current. Item Previous Standby Current(Isb1) 0.3mA 3. Added Data Retention Characteristics. Changed 0.5mA Rev. 3.1 Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA) Apr. 24. 2000 Final Rev. 3.2 Supply Voltage Change 1. Only 10ns Bin : 3.15V ~ 3.6V 2. The Rest Bin : 3.0V ~ 3.6V Aug. 25. 2000 Final Rev. 3.3 V IH/VIL Change Oct. 2. 2000 Final Sep. 24. 2001 Final Item V IH V IL Rev. 4.0 Previous Min 2.0 -0.5 Max V CC+0.5 0.8 Changed Min Max 2.0 V CC+0.3 -0.3 0.8 Delete 20ns speed bin The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 4.0 September 2001
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