K9W8G08U1M
K9K4G08U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
Feb. 19. 2003
Advance
0.1
1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
Mar. 31. 2003
Preliminary
0.2
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
Apr. 9. 2003
Preliminary
0.3
1. The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9K4G08Q0M-PCB0,PIB0
K9K4G08U0M-PCB0,PIB0
K9K4G16U0M-PCB0,PIB0
K9K4G16Q0M-PCB0,PIB0
K9W8G08U1M-PCB0,PIB0
Apr. 30. 2003
Preliminary
0.4
1. Added Addressing method for program operation.
Jan. 27. 2004
Preliminary
0.5
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns
- tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
2. Added addressing method for program operation
3. PKG(TSOP1) Dimension Change
May.31. 2004
Preliminary
0.6
1. Technical note is changed
2. Notes of AC timing characteristics are added
3. The description of Copy-back program is changed
4. 1.8V part is deleted
Feb. 01. 2005
Preliminary
0.7
1. CE access time : 23ns->35ns (p.11)
Feb. 14. 2005
Preliminary
0.8
1. The value of tREA is changed.(18ns->20ns)
2. The value of output load capacitance is changed.
3. EDO mode is added.
May
4. 2005
0.9
1. The flow chart to creat the initial invalid block table is changed.
May
6. 2005
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
1