K6X4008T1F Family
CMOS SRAM
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No. History
Draft Data
Remark
0.0
Initial Draft
July 29, 2002
Preliminary
0.1
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
October 14, 2002
Preliminary
0.2
Revised
- Added Commercial product
December 2, 2002
Preliminary
0.21
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
March 26, 2003
Preliminary
1.0
Finalized
- Changed ICC from 4mA to 2mA
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 30mA to 25mA
- Changed ISB1(Commercial) from 15µA to 10µA
- Changed ISB1(industrial) from 20µA to 10µA
- Changed ISB1(Automotive) from 30µA to 20µA
- Changed IDR(Commercial) from 15µA to 10µA
- Changed IDR(industrial) from 20µA to 10µA
- Changed IDR(Automotive) from 30µA to 20µA
September 16, 2003
Final
2.0
Revised
- Added lead free product
- Changed ISB1(Automotive) from 20µA to 30µA
- Changed IDR(Automotive) from 20µA to 30µA
March 7, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 2005
