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SST39VF1681-70-4C-EKE

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仕様・特性

16 Mbit (x8) Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 A Microchip Technology Company Data Sheet The SST39VF1681 / SST39VF1682 are 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 / SST39VF1682 write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x8 memories. Features • Organized as 2M x8 • Security-ID Feature – SST: 128 bits; User: 128 bits • Single Voltage Read and Write Operations • Fast Read Access Time: – 2.7-3.6V – 70 ns • Superior Reliability • Latched Address and Data – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical) • Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 64 KByte) for SST39VF1682 – Bottom Block-Protection (bottom 64 KByte) for SST39VF1681 • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Chip-Erase Capability • Erase-Suspend/Erase-Resume Capabilities • Hardware Reset Pin (RST#) ©2011 Silicon Storage Technology, Inc. • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Byte-Program Time: 7 µs (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bits – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and Command sets • Packages Available – 48-ball TFBGA (6mm x 8mm) – 48-lead TSOP (12mm x 20mm) • All devices are RoHS compliant www.microchip.com DS25040A 05/11

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