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SST39VF800A-70-4I-B3KE
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash A Microchip Technology Company SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/ 800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Features: • Organized as 128K x16 / 256K x16 / 512K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Fast Read Access Time – 55 ns for SST39LF200A/400A/800A – 70 ns for SST39VF200A/400A/800A • Latched Address and Data • Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) – 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit • All non-Pb (lead-free) devices are RoHS compliant ©2011 Silicon Storage Technology, Inc. www.microchip.com DS25001A 03/11
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