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VNP10N06FI
VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM Vclamp 60 60 60 60 V V V V R DS(on) 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 s s s s s s s s s LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 2 1 1 IPAK TO-251 DPAK TO-252 3 1 ISOWATT220 2 SOT82-FM BLOCK DIAGRAM (*) (∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2. October 1997 1/14
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