V80H150PW-M3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 10 A
FEATURES
®
• Trench MOS Schottky technology
TMBS
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
TYPICAL APPLICATIONS
PIN 1
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
PIN 3
CASE
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 40 A
VRRM
150 V
IFSM
280 A
VF at IF = 40 A
0.68 V
TJ max.
175 °C
Package
TO-3PW
Diode variation
Dual common cathode
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum average forward rectified current
(fig. 1)
UNIT
VRRM
Maximum repetitive peak reverse voltage
V80H150PW
150
V
80
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IF(AV)
A
40
IFSM
280
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +175
°C
Revision: 04-Dec-13
Document Number: 89947
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000