J.£ii£.u <^>£tni-Conauctoi \Pioaucti, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUX78
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(rc.2s-c«*»<**««.«M)
VCBO
VCEO
VEBO
ic
IB
PD
Collector - Base Voltage
-100V
Collector - Emitter Voltage
-80V
Emitter - Base Voltage
-6V
Continuous Collector Current
5A
0.8A
40W
Base Current
Total Power Dissipation at
TC = 25°C
Derate Above 25°C
0.23W/°C
TJ
Junction Temperature Range
-65 to +200PC
Tstg
Storage Temperature Range
-65 to -t-200°C
THERMAL PROPERTIES
Symbols j Parameters
RgjC
] Thermal Resistance, Junction To Case
Max.
Units
4.4
1Mln. I Typ.
°c/w
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise stated)
Symbols
,,
ni
(BR)CEO
v
(BR)CES
w
v/DD\cDn
(onitau
Parameters
I Collector-Emitter
j Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
ICEO
Collector Cut-Off Current
ICBO
Test Conditions
Typ
Min.
lc = -50mA
IB - 0
-80
lc = -2mA
VBE a 0
-100
IE = -1.0mA
lc=0
VCE = -60V
IB = 0
Collector Cut-Off Current
Vf-D = '80V
V
-6
-10
IE = 0
^.-__.____.___
-0.5
VEB = -w
ic - o
lc = -0.5A
VCE = -5V
1
lc = -2A
V C£ = -5V
50
Forward-current transfer
: ratio
lc = -5A
VCE = -5V
30
IEBO
.1.
Emitter Cut-Off Current
:
IC = - 1 0 A
ICE(sat)
v
in
BE(sat)
Collector-Emitter Saturation
| voltage
Base-Emitter Saturation
voltage
-0.5
50
120
VCE--5V
Tc = -40°C
v
MA
-150
I
^
Units
Max.
IC = -5A
25
I B »-0.5A
-1 0
..
I
lr = -5A
I B =-0.5A
IC = -0.5A
VCE = -5V
-1 3
!
DYNAMIC CHARACTERISTICS
|hf I
e
Small signal forward-current
i transfer ratio
1.5
f = 20MHz
1
lc = -5A
V cc = -40V
.4
I B 1 =-0,5A
'off
i
: Turn-Off Time
lc = -5A
I B 1 = IBS = - 0 5 A
Quality Semi-Conducfors
TO66
MS
V cc = -40V
1.1
2.5