^£,mi-donau<2toi Lpioducti, Dnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
D41D1
D41D2
D41D4
D41D5
D41D7 D41D13
041D8 D41D14
D41D10
D41D11
PNP SILICON
POWER TRANSISTOR
MAXIMUM RATINGS: (TC=25SC)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
D41D1
SYMBOL D41D2
V CES
45
VCEO
VEBO
D41D7
D41D8
75
60
45
75
UNITS
V
V
5.0
V
IC
1-0
A
ICM
PD
1-5
6.25
W
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
30
D41D4
D41D5
60
041 D10
D41D11
D41D13
D41D14
90
A
Tj,T stg
-65to+150
"C
«JC
20
"C/W
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
VCE=Rated VCES
MAX
100
UNITS
nA
100
nA
IEBO
vEB=s.ov
BVCEO
lc=10mA(D41D1,2)
30
V
BVCEO
lc=10mA(D41D4, 5)
45
V
BVCEO
lc=10mA(D41D7, 8)
BVCEO
lc=10mA(D41D10, 11, 13, 14)
60
75
V
V
V CE(SAT)
lc=500mA, !B=50mA (D41D1, 2, 4, 5)
0.5
V
VCE(SAT)
lc=500mA, lg=50mA (D41D7, 8, 10, 11, 13, 14)
1.0
V
VBE(SAT)
lc=500mA, !B=50mA
1.5
V
hFE
VCE=2.0V, lc=100mA
hFE
VCE=2.0V, IC=1.0A
(Except D40D13, 14)
D41D1
D41D4
D41D7
D41D10
D41D13
MJN MAX
50
150
10
D41D2
MIN MAX
120 300
20
D41D5
D41D8
D41D11
D41D14
MIN MAX
120 360
10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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