FHX13LG, FHX14LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg ≤ 0.15µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
TM
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT )
intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz
frequency range. The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or
other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and
consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
3.5
V
Gate-Source Voltage
VGS
-3.0
V
Pt*
180
mW
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Total Power Dissipation
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
IDSS
gm
Vp
VGSO
Noise Figure
FHX13LG
Associated Gain
Associated Gain
NF
FHX14LG
Thermal Resistance
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
Min.
10
35
-0.1
IGS = -10µA
-3.0
Gas
Rth
Channel to Case
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
or
to
to
or
Edition 1.1
July 1999
less
3200
10000
over
Sample qty.
125
200
315
500
Unit
mA
mS
V
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
1
0.45
0.50
V
dB
11.0
13.0
-
dB
-
0.55
0.60
dB
11.0
VDS = 2V,
IDS = 10mA,
f = 12GHz
AVAILABLE CASE STYLES: LG
1200
1201
3201
10001
Limit
Typ. Max.
30
60
50
-0.7
-1.5
-
-
NF
Gas
Noise Figure
Condition
13.0
-
dB
-
300
400
°C/W
