PD - 90552C
IRFF9120
JANTX2N6845
JANTXV2N6845
REF:MIL-PRF-19500/563
100V, P-CHANNEL
REPETITIVE A ALANCHE AND dv/dt RATED
V
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number
IRFF9120
BVDSS
-100V
RDS(on)
0.60Ω
ID
-4.0A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-4.0
-2.6
-16
20
0.16
±20
115
—
—
-5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
C
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
