DSF521
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
DSF521
High Speed Switching Application
Unit: mm
Low forward voltage : VF (3) = 0.5V (max.)
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
200
mA
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
Surge current (10ms)
*:
Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Total capacitance
Typ.
Max
IF = 1 mA
―
0.2
―
―
IF = 5 mA
―
0.24
―
―
IF = 200 mA
―
0.45
0.5
IR (1)
―
VR = 10 V
―
―
20
IR (2)
Reverse current
Min
VF (3)
Forward voltage
Test Condition
―
VR = 30 V
―
―
30
CT
―
VR = 0, f = 1 MHz
⎯
32
⎯
Equivalent Circuit (top view)
Unit
V
μA
pF
Marking
R7
Start of commercial production
2009-04
1
2014-03-01
