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6A1
ZXMN6A11G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 4.4 0.180 @ VGS= 4.5V 3.5 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT223 package G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D D Ordering information G Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 ZXMN6A11GTA Pinout - top view Device marking ZXMN 6A11 Issue 4 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com
MICRON
Micron Technology
U.S.A
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