Ordering number : ENN7587
Infrared Laser Diode
DL-7140-201S
DL-7140-201S
Infrared Laser Diode
Features
Package Dimensions
Tolerance : ±0.2
: mm
• Wavelength
: 785 nm (Typ.)
• Low threshold current
: Ith = 30 mA (Typ.)
• High operating temperature : 70 mW (CW) at 60°C
Unit
0
5.6--0.025
4.4
3.55±0.1
1.6
Effective window diameter 1.0min.
1
3
Top view
2
1.0±0.1
• Optical disc system (CD-R)
0.4±0.1
Applications
1.4max.
3.5±0.5
1.2±0.1
Absolute Maximum Ratings at Tc=25°C
6.5±1.0
1.27±0.08
0.5max.
0.25
LD facet
3-- 0.45±0.1
Parameter
Symbol
CW
Light Output
Ratings
Po (CW)
Unit
80
Pin No. 1 2 3
mW
Pulse 1) Po (pulse)
85
Laser
PD
VR
2
30
V
Topr
--10 to +60
°C
Storage Temperature
Tstg
1) Pulse width≤1.0 µs, Duty 50%
--40 to +85
2.0
5.6mm stem
°C
Reverse Voltage
Operating Temperature
Pin Connection
1
LD
Electrical and Optical Characteristics at Tc=25°C
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam
2)
Perpendicular
Divergence
Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ⊥
∆ θ //
dPo/dIop
Im
As
Condition
CW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
3
PD
2
Min.
775
14
6
0.6
0.10
-
Typ.
30
100
2.0
785
17
8
1.0
0.25
-
Max.
50
140
2.8
800
20
10
±3
±3
1.4
0.6
10
Unit
mA
mA
V
nm
°
°
°
°
mW/mA
mA
µm
2) Full angle at half maximum
Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62503 YY IM No.7587 1/3
