This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1124
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
Unit: mm
4.9±0.2
8.6±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
5.9±0.2
■ Features
0.7+0.3
–0.2
0.7±0.1
13.5±0.5
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ea
ne clu
se
pla m d de
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ht
ne ai ma s fo
tp it f
:// ol d d d nte inte llow
ww lo is is na n
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w. win con con nce anc ng f
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m R ue ue yp typ r P
ico L d d e
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ro
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• Satisfactory forward current transfer ratio hFE collector current IC
characteristics.
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open circuited) Cob
• Makes up a complementary pair with 2SC2632, which is optimum
for the pre-driver stage of a 40 W to 60 W output amplifier.
0.45+0.2
–0.1
■ Absolute Maximum Ratings Ta = 25°C
(1.27)
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−150
V
Collector-emitter voltage (Base open)
VCEO
−150
V
Emitter-base voltage (Collector open)
VEBO
−5
(1.27)
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
V
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
2.54±0.15
°C
ue
Collector current
1 2 3
(3.2)
Parameter
0.45+0.2
–0.1
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
VCEO
IC = − 0.1 mA, IB = 0
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
hFE
VCE = −5 V, IC = −2 mA
VCE(sat)
Min
Typ
VCB = −100 V, IE = 0
Forward current transfer ratio *
IC = −30 mA, IB = −3 mA
te
na
nc
e/
Di
sc
on
Parameter
Collector-emitter voltage (Base open)
M
ain
Collector-emitter saturation voltage
Transition frequency
VCB = −10 V, IE = 10 mA, f = 200 MHz
fT
Noise voltage
NV
VCE = −10 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
Unit
V
−5
V
−1
µA
330
−1
130
V
200
VCB = −10 V, IE = 0, f = 1 MHz
Cob
Pl
Collector output capacitance
(Common base, input open circuited)
Max
−150
MHz
5
150
pF
300
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
130 to 220
185 to 330
Publication date: November 2002
SJC00012BED
1
