ne,
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TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
FAX: (973) 376-8960
U.S.A.
2N6040 »hru2N6042 PNP (SILICON)
DARLINGTON
8 AMPERE
2N6043.hru 2x6045 NPN
MJE6040 ,hru MJE6042 PNP
MJE6043 ^ MJE 6045 NPN
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
. . . designed for general-purpose amplifier and low-speed switching
applications.
• High DC Current Gain hpE = 2500 (Typ) @ IG = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc < i >
v CEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
= 80 Vdc (Min) - 2N6041, 2N6044
= 100 Vdc (Min) - 2N6042,2N6045
• Low Collector Emitter Saturation Voltage — il
VcE(sat) = 2.0Vdc(Max) @ 1C = 4.0 Adc - 2N6040,41.2N6043.44
= 2.0 Vdc (Max) @> \ = 3.0 Adc - 2N6042, 2N6045
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 80 100 VOLTS
75 WATTS
2N6040 thru 2N6045
PIN 1 B A S E
2. C O L L E C T O R
3. EMITTER
• Monolithic Construction with Built-in Base Emitter
Shunt Resistors
CASE 199 04
• Thermopad High Efficiency Compact Package
(1) Applies to corresponding in house part numbers also.
MJE6040 thru MJE6045
•MAXIMUM RATINGS
Riling
Syrntml
Collector-Emitter Volume
_VCEOJ
Collector-BcM Voltage
ErnitterBw Volttge
CollKtor Current
Continuout
VCB
VEB
1^
60
>B
Tot* Device Oiuip.non te» Q
Unit
100
Vdc
100
Vdc
— so-
—
Vdc
80 —
16 —
•
B« Current
1HS042
2N604S
MJ66M.
MJE604E
ao
ao
60
P«k
Adc
120——
mAdc
o
O*r«te tbove 2b C
Tottf D«vic«Oiuip.lionl9iTA
2N8O40 2NGO41
2N6043 2 H6044
MJE6040 M E6O41
MJE6043 MJE6044
25°C
PD
_
Dvr.tt above 2S°C
uoer.ting .nd storage junction.
Ttmpcr.ture Rtnge
Tj,T,,,
?2
00175
—
-65 to » 150
Wills
«/°C
—
°C
TO127
THERMAL CHARACTERISTICS
Thvfmjjl Rmttieinct. Junction to Amh ent
Symbol
M.,
"JC
ChVKl«.M
PIN 1 EMITTER
2. COLLECTOR
3. BASE
16;
°C/W
»JA
57
°c;w
•,„««.,- JE DECH W »-.d 0 1
. .
Quality Semi-Conductors
Unit