ZTX654 Not Recommended for
New Design Please Use ZTX655
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX654
ZTX655
ISSUE 2 JULY 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
TYPICAL CHARACTERISTICS
0.18
hFE - Normalised Gain (%)
VCE(sat) - (Volts)
100
IC/IB=10
0.10
ZTX654
ZTX655
80
C
B
VCE=5V
60
40
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
0.1
1
10
0.1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
1.2
IC/IB=10
VCE=5V
1.0
VBE - (Volts)
VBE(sat) - (Volts)
1.2
V
Collector-Emitter Voltage
VCEO
125
150
V
VEBO
5
V
ICM
2
A
IC
1
A
Ptot
1
W
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.0
ZTX654
0.4
0.01
0.1
1
0.8
PARAMETER
SYMBOL
0.6
0.8
0.6
Collector-Base
Breakdown Voltage
V(BR)CBO
125
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off
Current
ICBO
Emitter Cut-Off
Current
IEBO
Collector-Emitter
Saturation Voltage
0.01
0.1
1
VBE(sat) v IC
10
IC - Collector Current (Amps)
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
td
tr
tf
µs
ts
µs
IB1=IB2=IC/10
VCE=10V
ts
3.0
0.7
1.0
0.1
Switching time
0.6
D.C.
1s
100ms
10ms
1.0ms
300µs
ZT
X6
54
td
2.0
0.5
0.4
0.3
1.0
tf
0.2
0.1
tr
0
ZTX655
0.01
0.1
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-226
ZTX655
100
0.4
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
10
UNIT
150
Emitter-Base Voltage
1
ZTX655
125
Operating and Storage Temperature
Range
0.01
ZTX654
VCBO
Peak Pulse Current
0
SYMBOL
Collector-Base Voltage
Power Dissipation at Tamb=25°C
0.01
PARAMETER
Continuous Collector Current
0
20
1
UNIT
CONDITIONS.
150
V
IC=100µ A, IE=0
125
150
V
IC=10mA, IB=0*
5
5
V
IE=100µ A, IC=0
100
nA
nA
VCB=100V, IE=0
VCB=125V, IE=0
100
100
nA
VEB=3V, IC=0
VCE(sat)
0.5
0.5
0.5
0.5
V
V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
1.0
V
IC=500mA, VCE=5V*
Static Forward
Current Transfer
Ratio
hFE
50
50
20
50
50
20
Transition
Frequency
fT
30
30
Output Capacitance
Cobo
MIN.
MAX. MIN.
20
3-225
MAX.
IC=10mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
MHz
20
IC=10mA, VCE=20V
f=20MHz
pF
VCB=20V, f=1MHz