2N5664
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose high power switching
• Power Transistor
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5664J)
• JANTX level (2N5664JX)
• JANTXV level (2N5664JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
•
•
•
•
Hermetically sealed TO-66 metal can
Also available in chip configuration
Chip geometry 9221
Reference document:
MIL-PRF-19500/455
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
TC = 25°C unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
200
Collector-Base Voltage
VCBO
250
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
6
Volts
IC
5
A
2.5
14.3
30
300
Collector Current, Continuous
Thermal Resistance
RθJA
3.3
W
mW/°C
W
mW/°C
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C
Copyright 2002
Rev. D
PT
PT
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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