HOME＞在庫検索＞在庫情報
YG868C12R
YG868C12R (30A) (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 30 1 Tc=25°C MAX. A 2 3 1.2±0.2 13Min 120 0.88 3.7±0.2 VRRM VF 2.7±0.2 Characteristics YG868C12R Units Condition 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 2.54±0.2 Features Low VF High Voltage Center tap connection 0.6 2.7±0.2 Applications Package : TO-220F Epoxy resin UL : V-0 High frequency operation DC-DC converters AC adapter Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions 1 2 Rating Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage VRRM Isolating voltage Viso Terminals-to-Case, AC.1min Average output current Io Square wave, duty=1/2 Tc=115°C Non-repetitive surge current ** IFSM Sine wave 10ms 1shot Operating junction temperature Storage temperature tw=500ns, duty=1/40 3 Unit 120 V 120 V 1500 V 30 * A 225 A Tj +150 °C Tstg -40 to +150 °C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VF IFM=15A 0.88 V Reverse current IR VR=VRRM 200 µA 1.2 °C/W Thermal resistance Rth(j-c) Junction to case Mechanical characteristics Mounting torque Approximate mass Recommended torque 0.3 to 0.5 2 N·m g
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
