TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
Qualified Level
2N5671
JAN
JANTX
JANTXV
2N5672
MAXIMUM RATINGS
Ratings
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Temperature Range
Symbol
2N5671
2N5672
Unit
VCEO
VCBO
VEBO
IB
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
90
120
120
150
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
PT
Top, Tstg
7.0
10
30
6.0
140
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 800 mW/0C for TC > +250C
Symbol
RθJC
Max.
1.25
Unit
C/W
TO-3*
(TO-204AA)
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N5671
2N5672
V(BR)CEO
90
120
Vdc
2N5671
2N5672
V(BR)CER
110
140
Vdc
2N5671
2N5672
V(BR)CEX
120
150
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = 1.5 Vdc
VCE = 135 Vdc, VBE = 1.5 Vdc
ICEO
2N5671
2N5672
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
10
mAdc
ICEX
12
10
mAdc
120101
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