SSM3K127TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K127TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
2.1±0.1
•
Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V)
2.0±0.1
: Ron = 167 mΩ (max) (@VGS = 2.5V)
: Ron = 123 mΩ (max) (@VGS = 4.0V)
0.65±0.05
1.8V drive
+0.1
0.3 -0.05
1.7±0.1
•
1
3
2
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±12
V
DC
ID
2.0
Pulse
IDP
4.0
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
0.7±0.05
Characteristic
Drain current
Drain power dissipation
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
A
UFM
1. Gate
2. Souce
3. Drain
mW
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 6.6mg (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm )
Note 2: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Start of commercial production
2007-04
1
2014-03-01
