HOME>在庫検索>在庫情報
2N4931
TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level 2N3743 2N4930 JAN, JANTX JANTXV 2N4931 MAXIMUM RATINGS Ratings Sym Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCEO VCBO VEBO IC @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35 TO-39* (TO-205AD) Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 300 200 250 V(BR)CBO Max. 300 200 250 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 1.0 mAdc Collector-Emitter Breakdown Voltage IC = 100 µAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 Vdc Vdc V(BR)EBO 2N3743 2N4930 2N4931 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 5.0 Vdc ICBO 250 250 250 ηAdc 120101 Page 1 of 2
お買い上げ小計が1万円以上の場合は送料はサービスさせて頂きます。1万円未満の場合、また時間指定便はお客様負担となります。(送料は地域により異なります。)