t~>£mi-L-onaucto'i J-ioau.ct\, One.
20 STERN AVE,
,
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (201) 376-2922
(212)227-6005
FD300 • FD333 • FDH300 • FDH333
™'3768960
HIGH CONDUCTANCE LOW LEAKAGE
DIFFUSED SILICON PLANAR
See Package Outlines
DIODES
DO7
D036
FD300
FD333
FDH300
FDH333
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature!
Storage Temperature
Operating Temperature
-65° C to + 200°C
175°C
FD300. FD333
<100 mW
2.67 mW/ C
125 V
200mA
500 mA
600 mA
GOO mA
4000 mA
Maximum Voltages and Currents
WIV
Working Inverse VolUige
|Q
Average Rectified Current
IF
Forward Current Steady State
if
Recurrent Peak Forward Current
'((surge)
Pe8k Forward Surge Current
Pulse Width - 1.0s
Pulse Width * 1.0 HS
FDH300, FDH333
500 mW
3.33 m W / ° C
125 V
150mA
375 niA
150 mA
Maximum Power Dissipation (Notes 2 & 31
Total Dissipation at 25' C Ambient Temperature
Linear Derating F a c t o r
1000 mA
4000 mA
ELECTRICAL CHARACTERISTICS (25 3 C Ambient Temperature unless otherwise noted)
SYMBOL
VF
CHARACTERISTIC
FD300, FDH300
WIN
MAX.
Forward Voltage
FD333, FDH333
WIN. M A X .
UNITS
TEST CONDITIONS
0.9
1,0
1.15
V
0.88
1.08
V
Ip • 250mA
0.87
1.05
V
IF -200mA
If "150mA
IF • 300mA
0.86
0,97
V
0.92
0.83
0.94
V
IF « 100mA
0.88
0.80
0,89
V
IF
IF
IF
IF
0.8
0.75
V
•"
V
O.G8
IR
Reverse Current
V
1.0
3.0
3.0
nA
-50mA
- 10mA
- 5.0mA
- 1.0mA
VR=-125V
Capacitance
BV
Breakdown Voltage
V R "-12B V , T A - 160°C
500
c
juA
nA
V R - - 1 2 5 V , T A " 100° C
6.0
pF
VR-0
V
I R - 100 MA
6.0
150
150
DO35
MILLIMETERS
INCHES
DIM
A
8
C
D
Quality Semi-Conductors
WIN,
TYP.
MAX.
MIN.
TYP.
MAX.
25.40
1.0 ,
4.S7
1.91
.180
.075
020
0.508
