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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
BUY24
DESCRIPTION
• Collector-Emitter Breakdown Voltage• V(BR)CEO
wuv^iviiii.;
• Low Collector Saturation Voltage:V C E(sat)=1.0V@lc=5A
<^H
APPLICATIONS
3
PIN 1.BASE
• Designed for use switching and general purpose applications.
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
60
VEBO
6
V
-N-1
-I
\
L
V
Emitter-Base Voltage
t
•* r
t-E
K— U —*
A&^
t V
r
/
i^
^ >
Ic
PC
Tj
Tstg
Collector Current-Continuous
Collector Power Dissipation
@TC<75'C
Junction Temperature
Storage Temperature Range
5
15
A
Rth j-c
Thermal Resistance, Junction to Case
t
I
1
\
GH
W
IHI
I I
150
•c
-55-150
•c
DM
A
R
c
MM
WAX
3900
25.30 26.67
7.80
0
0.90
t.40
1092
G
H
THERMAL CHARACTERISTICS
PARAMETER
't
C
.f I?
vU
E
SYMBOL
\H
-*tu-b 2 K L
MAX
5.0
UNIT
K
L
N
"CM/
q
U
V
8.30
1.10
1,60
5.46
11.40
1675
19.40
4.00
3000
4.30
13.50
17.05
13.62
420
3020
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ofgoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors