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2N6285
Inchange Semiconductor Product Specification 2N6285 2N6286 2N6287 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6282/6283/6284 ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 半导 电 TOR Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER 2N6285 Collector-base voltage IN Collector-emitter voltage 2N6286 EMIC Open emitter GE S HAN C DUC ON CONDITIONS 2N6287 2N6285 2N6286 Open base 2N6287 Emitter-base voltage VALUE UNIT -60 -80 V -100 -60 -80 V -100 Open collector -5 V IC Collector current -20 A ICM Collector current-peak -40 A IB Base current -0.5 A PD Total Power Dissipation 160 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.09 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case
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