P-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ZCP0545A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
MAX.
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
PARAMETER
SYMBOL MIN.
UNIT CONDITIONS.
FEATURES
Forward Drain-Source
Breakdown Voltage
BVDSS
-450
V
Reverse Drain-Source
Breakdown Voltage (4)
BVSD
-20
V
*
*
EXTREMELY LOW ON STATE VOLTAGE
NO NEED TO DERATE FOR HIGHER TEMPERATURES
*
EASE OF PARALLELING
Gate-Source
Threshold Voltage
VGS(th)
-1
ID=-1mA, VDS= VGS
*
*
EXCELLENT TEMPERATURE IMMUNITY
HIGH INPUT IMPEDANCE
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Drain Source
Saturation Voltage (1)
TYP.
ZCP0545A
VGS=0V
-3.5
V
IGSS
20
nA
VGS=± 20V, VDS=0V
*
IDSS
-20
-2
µA
mA
VDS=max. rating, VGS=0
VDS=0.8 x max. rating, VGS=0V,
Tamb=125°C (2)
S
E-Line
TO92 Compatible
REVERSE BLOCKING CHARACTERISTIC WHICH IS
INDEPENDENT OF GATE BIAS
*
D
G
LOW INPUT CAPACITANCE
VDS(SAT)
-3
-3
V
V
ID=-500mA, VDS=-10 V
ID=-200mA, VDS=-5 V
Static Drain-Source
RDS(on)
On-State Resistance (1)
6
Ω
VGS=-10V,ID=-500mA
Input Capacitance (2)
120
pF
Common Source
Coss
Output Capacitance (2)
20
pF
Reverse Transfer
Capacitance (2)
Crss
5
pF
Switching Times (2)(3)
ton
150
ns
350
ns
*
CHARACTERISED FOR LOGIC LEVEL DRIVE
APPLICATIONS
Ciss
toff
250
VDS=-25 V, VGS=0V, f=1MHz
VDD ≈−25V, VGEN=-10V
ID=250mA, RGS=50Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
*
FLUORESCENT LAMP DRIVER
*
*
AUTOMOTIVE LOAD DRIVERS
HIGH VOLTAGE DC-DC CONVERTERS
*
DARLINGTON REPLACEMENT
*
TELECOMS HOOK SWITCH AND EARTH RECALL SWITCH
ABSOLUTE MAXIMUM RATINGS (at Tamb=25°C unless otherwise stated)
PARAMETER
SYMBOL
Forward Drain-Source Voltage
VDS
Reverse Drain Source Voltage
VSD
-20
V
Continuous Drain Current
ID
-0.32
A
Practical Continuous Drain Current*
IDP
-0.37
A
Pulsed Drain Current
IDMR
IDM
-0.8
-0.4
A
A
@ Tamb=25°C
@ Tamb=125°C
VALUE
UNIT
-450
V
Gate-Source Voltage
VGS
±20
V
Power Dissipation
Ptot
0.6
W
Practical Power Dissipation*
PDP
Operating and Storage Temperature Range
Tj:Tstg
0.8
W
-55 to +125
°C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
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