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ET516
ET516 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)250 V(BR)CBO (V)400 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 @I(C) (A) (Test Condition)3.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq5.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time. t(r) Max. (s) Rise time400n t(on) Max. (s) On time.
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