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TIC236D
TIC236 SERIES SILICON TRIACS Copyright © 2000, Power Innovations Limited, UK G High Current Triacs G 12 A RMS G Glass Passivated Wafer G 400 V to 800 V Off-State Voltage G DECEMBER 1971 - REVISED JUNE 2000 Max IGT of 50 mA (Quadrants 1 - 3) TO-220 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC236D TIC236M Repetitive peak off-state voltage (see Note 1) TIC236S UNIT 400 600 VDRM V 700 TIC236N 800 IT(RMS) 12 Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 100 A Peak gate current IGM ±1 A Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) Lead temperature 1.6 mm from case for 10 seconds A NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 300 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM TEST CONDITIONS Repetitive peak VD = Rated VDRM off-state current IG = 0 MIN TC = 110°C MAX UNIT ±2 TYP mA Vsupply = +12 V† IH 50 tp(g) > 20 µs -19 -50 current Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -16 -50 RL = 10 Ω tp(g) > 20 µs 34 RL = 10 Ω tp(g) > 20 µs 0.8 2 Gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -0.8 -2 voltage Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -0.8 -2 Vsupply = -12 V† VT 12 RL = 10 Ω Vsupply = +12 V† VGT tp(g) > 20 µs Vsupply = +12 V† Vsupply = -12 V† IGT RL = 10 Ω Gate trigger RL = 10 Ω tp(g) > 20 µs 0.9 2 ITM = ±17 A IG = 50 mA (see Note 4) ±1.4 ±2.1 Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 22 40 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -12 -40 On-state voltage Holding current mA V V mA † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1
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