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2N5381
2N5381 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq300M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition)
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