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2S501
2S501 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain. @I(C) (A) (Test Condition)10u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq30M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C(obo) (Max) (F)8.0p @V(CB) (V) (Test Condition) @Freq. (Hz) (Test Condition)
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