IS/ISO 9002
Lic# QSC/L- 000019.3
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON POWER TRANSISTOR
BDX35
TO-126
Plastic Package
EC
B
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
IBM
-IBM
Ptot
VALUE
100
100
60
5
5
10
1
2
2
15
1.25
UNIT
V
V
V
V
A
A
A
A
A
W
W
Storage Temperature
Tstg
- 65 to +150
ºC
Junction Temperature
Tj
150
ºC
Rth (j-mb)
5.0
K/W
Rth (j-a)
100
K/W
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Base Current
Base Current Peak
Reverse Base Current Peak
Total Power Dissipation @ Tmb=75 ºC
@ Tamb=25 ºC
Thermal Resistance
Junction to Mounting Base
Junction to Ambient in free air
ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
SYMBOL
ICBO
IEBO
DC Current Gain
Collector Emitter Saturation Voltage
hFE
VCE (sat)
Base Emitter Saturation Voltage
VBE (sat)
Continental Device India Limited
TEST CONDITION
VCB=80V, IE=0
Tj=100 ºC
VCB=80V, IE=0
IC=0, VEB=4V
IC=0, VEB=5V
IC=0.5A, VCE=10V
IC=5A, IB=0.5A
IC=7A, IB=0.7 A
IC=5A, IB=0.5A
IC=7A, IB=0.7 A
Data Sheet
MIN
45
TYP
MAX
10
UNIT
µA
50
10
1.0
450
0.9
1.2
1.6
1.9
µA
µA
mA
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V
V
V
V