BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PT
TJ
TS
Ratings
V
V
V
V
A
A
Watts
°C
Unit
1.5
@ TC = 25°
45
50
7
50
15
7
117
Value
VBE=-1.5 V
Unit
-65 to +200
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(BR)
VCEX(BR)
VCE(SAT)
ICEX
IEBO
VBE
IS/B
Collector-Emitter Breakdown Voltage (*)
Collector-Emitter Breakdown Voltage (*)
Collector-Emitter Saturation Voltage (*)
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
Second Breakdown collector current
hFE
Static Forward Current Transfer Ratio (*)
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
18/10/2012
Test Condition(s)
Min
IC=200 mA, IB=0
IC=100 mA, VBE=-1.5 V
IC=4 A, IB=0.4 A
VCE= 40 V, VBE=-1.5 V
VEB=7 V
IC=4.0 A, VCE=4.0V
t=1s, VCE=39 V
VCE=4.0 V, IC=4.0 A
VCE=4.0 V, IC=0.5 A
45
50
3
12.5
20
COMSET SEMICONDUCTORS
Typ
-
Max
1.1
2
1
1.5
160
1/2
Unit
V
V
V
mA
mA
V
A
-