BUZ 100
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 100
50 V
60 A
0.018 Ω
TO-220 AB
C67078-S1348-A2
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 101 °C
Values
Unit
A
60
IDpuls
Pulsed drain current
TC = 25 °C
240
EAS
Avalanche energy, single pulse
mJ
ID = 60 A, VDD = 25 V, RGS = 25 Ω
L = 70 µH, Tj = 25 °C
250
Reverse diode dv/dt
dv/dt
kV/µs
IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
6
Gate source voltage
VGS
Power dissipation
± 20
Ptot
TC = 25 °C
V
W
250
Operating temperature
Tj
-55 ... + 175
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, chip case
RthJC
≤ 0.6
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
K/W
E
IEC climatic category, DIN IEC 68-1
Semiconductor Group
°C
55 / 175 / 56
1
07/96