-J loaucti, U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
U.S.A.
2SA715
Silicon PNP Power Transistor
DESCRIPTION
• Good Linearity of hFE
• Collector-Emitter Breakdown VoltageV(BR)CEo= -35V (Min)
• Complement to Type 2SC1162
PIN 1.FMTTER
2.COLLECTOR
3. BASE
APPLICATIONS
TO-126 package
• Designed for use in low frequency power amplifier
applications.
~"*1 = !*-
f — B-.
PARAMETER
t
A
-
...1
VALUE
i
'& T
\
r
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
',\-f
UNIT
\
Q
1
•}
1
I
V
VCBO
Collector-Base Voltage
-35
V
T
D-*
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5.0
K """
f
i
*-R
4-
V
r~J
G >•»_-
_ .
• __
Ic
Collector Current-Continuous
-2.5
D
(j i • •
A
' ? 3
mm
Collector Current-Peak
-3.0
Collector Power Dissipation
@ Ta=25'C
ICM
0.75
A
W
PC
Total Power Dissipation
@ TC=250C
Tj
Tstg
10
Junction Temperature
150
•c
-55-150
r
Storage Temperature Range
DIM
A
B
C
D
F
G
H
J
K
0
K
V
MIN
MAX
10,70
7,70
2.60
10.95
7..90
2,80
0,86
3,30
4.6S
2.20
1.55
16,30
3,90
0,60
0.66
3.110
4.48
2.00
1.35
15.30
3,70
0.40
t.17
137
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions ithou
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of go
to press, I kwever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its List
NJ Semi-Conductors encourages customers to verify that datasheets are current before plueinu orders.
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