20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX; (973) 376-8960
BSX45; BSX46; BSX47
NPN medium power transistors
PINNING
FEATURES
• High current (max. 1 A)
PIN
DESCRIPTION
• Low voltage (max. 80 V).
1
emitter
base
APPLICATIONS
2
3
collector, connected to case
• General industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
PARAMETER
SYMBOL
VCBO
collector-base voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
open emitter
BSX45
_
-
80
V
BSX46
-
-
100
V
-
-
120
V
BSX45
-
-
40
V
BSX46
BSX47
-
-
60
V
-
-
80
V
BSX47
VCEO
collector-emitter voltage
open base
-
ICM
peak collector current
Plot
total power dissipation
Tcase < 25 °C
hFE
DC current gain
-
1.5
A
-
-
6.25
W
lc = 1 00 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
fi
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
-
-
transition frequency
lc = 50 mA; VCE = 10 V; f = 100 MHz 50
MHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors