TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices
2N2218
2N2218A
2N2218AL
Qualified Level
JAN
JANTX
JANTXV
JANS
2N2219
2N2219A
2N2219AL
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temp. Range
2N2218
2N2219
2N2218A; L
2N2219A; L
30
60
5.0
50
75
6.0
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
800
0.8
3.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
TO- 39* (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 4.6 mW/0C above TA > +250C
2) Derate linearly 17.0 mW/0C above TC > +250C
Max.
59
Unit
C/W
0
TO-5*
2N2218AL,
2N2219AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
Max.
30
50
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IE = 10 mAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 6.0 Vdc
VEB = 4.0 Vdc
Collector-Base Cutoff Current
VCE = 30 Vdc
VCE = 50 Vdc
2N2218; 2N2219
2N2218A; L; 2N2219A; L
2N2218; 2N2219
2N2218A; L; 2N2219A; L
All Types
2N2218; 2N2219
2N2218A; L; 2N2219A; L
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
IEBO
10
10
10
µAdc
ηAdc
ICES
10
10
ηAdc
120101
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