, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High-Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain - hFE = 1000 (Min) @ Ic = 25 Adc
hFE = 400 (Min) @ Ic = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated Ic
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
• Junction Temperature to + 200 °C
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60-120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
PNP
COLLECTOR
CASE
EMITTER 2
EMITTER 2
MJ11029
MJ11033
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Vdc
Collector-Emitter Voltage
M J 1 1 028/29 VCEO
MJ11030
MJ1 1032/33
60
90
120
Collector-Base Voltage
M J 1 1 028/29
MJ11030
MJ 11 032/33
VCBO
60
90
120
Vdc
VEBO
5.0
Vdc
Ic
50
100
Adc
Base Current - Continuous
IB
2.0
Adc
Total Power Dissipation @ Tc = 25°C
Derate Above 25°C @ Tc = 100°C
PD
300
1.71
W
W/°C
Tj,Tstg
-55to+200
"C
Symbol
Max
Unit
TL
275
°C
R6JC
0.58
°c/w
Emitter-Base Voltage
Collector Current - Continuous
-Peak (Note 1)
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature tor
Soldering Purposes for < 10 seconds
Thermal Resistance, Junction-to-Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions).and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 [is. Duty Cycle < 10%.
Quality Semi-Conductors
MJ11028
MJ11030
MJ11032
rro-3)
