2N6798
Data Sheet
December 2001
5.5A, 200V, 0.400 Ohm, N-Channel Power
MOSFET
Features
• 5.5A, 200V
The 2N6798 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This type can be operated directly from
integrated circuits.
• rDS(ON) = 0.400Ω
Formerly developmental type TA_____.
• Majority Carrier Device
Ordering Information
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
PART NUMBER
2N6798
PACKAGE
TO-205AF
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
BRAND
2N6798
Symbol
NOTE: When ordering, include the entire part number.
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6798 Rev. B