Fermionics Opto-Technology
SERIES NUM BER
FD100
High Speed InGaAs PIN Photodiodes
diameter of active area=100 µm
DESCRIPTION
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI
applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.
ABSOLUTE MAXIMUM RATINGS (T=25°C)
PARAMETER
RATING
UNITS
Storage Temperature
-40 to +100
°C
Operating Temperature
-40 to +85
°C
Forward Current
5
mA
Reverse Current
0.5
mA
Reverse Voltage
30
V
O PTICAL AND ELECT RICAL CHARACT ERISTICS (T = 25°C)
PARAMETER
SYMBOL
Responsivity
R
TEST CONDITIONS
MIN
TYP
MAX
UNITS
λ = 1300 nm
0.80
0.90
-
A/W
λ = 1550 nm
0.85
0.95
-
Dark Current
Id
VR =5V
-
0.5
3
nA
Rise/Fall Time
tR /t F
VR =5V
-
0.3
0.7
ns
Capacitance
C
VR =5V
-
1.1
1.5
pF
tR/tF<0.4 ns for diodes mounted on ceramic submounts
C<1.2 pF for diodes mounted on ceramic submounts
PACKAGE OPTIONS
PART NUMBER
PACKAGE DESCRIPTION
FD100W
TO-18 with AR-coated flat window cap
FD100L
TO-18 with lens cap
FD100S2
type S2 alumina ceramic submount
FD100S3
type S3 alumina ceramic submount
FD100FC
TO-style diode installed in FC-connector receptacle
FD100SC
TO-style diode installed in SC-connector receptacle
FD100ST
TO-style diode installed in ST-connector receptacle
FD100F(core/cladding)
TO-style diode with integral fiber pigtail (specify fiber core/cladding)
LASER COMPONENTS S.A.S.
45 Bis Route des Gardes, 92190 Meudon - France, Phone: +33 (0)1 3959 5225, Fax: +33 (0)1 3959 5350, info@lasercomponents.fr