HOME>在庫検索>在庫情報
2N5295
Inchange Semiconductor Product Specification 2N5293 2N5295 2N5297 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N5293 VCBO Collector-base voltage 2N5295 VALUE 80 Open emitter 60 2N5297 Collector-emitter voltage 70 2N5295 Open base 2N5297 VEBO Emitter-base voltage V 80 2N5293 VCEO UNIT 40 V 60 Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.47 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case
見積依頼→在庫確認→見積回答→注文→検収→支払 となります。