MOTOROLA
Order this document
by BC489/D
SEMICONDUCTOR TECHNICAL DATA
High Current Transistors
NPN Silicon
BC489,A,B
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
Rating
Symbol
Value
Collector – Emitter Voltage
VCEO
80
Vdc
Collector – Base Voltage
VCBO
80
Vdc
Emitter – Base Voltage
2
Unit
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
VEBO
5.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
—
Vdc
ICBO
—
—
100
nAdc
40
60
100
160
15
—
—
160
260
—
—
400
250
400
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
hFE
BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
—
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
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