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部品型式

ESVA1E225M

製品説明
仕様・特性

TANTALUM CAPACITORS E/SV Series Tantalum Chip Capacitors PERFORMANCE CHARACTERISTICS DIMENSIONS [mm] L Y W1 L W1 H H H W1 L Operating temperature range −55 to +125°C with proper voltage derating as shown in the following table. DC working voltage and surge voltage Z B2 only Z W2 W2 W2 Rated voltage Z [J, P, A2, A cases] Z Z Working Z Surge [B3, B2 cases] [C, D cases] (Unit: mm) Case EIA code Code L W1 W2 H Z Y J – 1.6 ± 0.1 0.8 ± 0.1 0.6 ± 0.1 0.8 ± 0.1 0.3 ± 0.15 P 2012 2.0 ± 0.1 1.25 ± 0.2 0.9 ± 0.2 1.1 ± 0.1 0.5 ± 0.1 A2 (U) 3216L 3.2 ± 0.2 1.6 ± 0.2 1.2 ± 0.1 1.1 ± 0.1 0.8 ± 0.2 A 3216H 3.2 ± 0.2 1.6 ± 0.2 1.2 ± 0.1 1.6 ± 0.2 0.8 ± 0.2 B3 (W) – 3.5 ± 0.2 2.8 ± 0.2 2.2 ± 0.1 1.1 ± 0.1 0.8 ± 0.2 B2 (S ) 3528 3.5 ± 0.2 2.8 ± 0.2 2.3 ± 0.1 1.9 ± 0.2 0.8 ± 0.2 C 6032 6.0 ± 0.2 3.2 ± 0.2 2.2 ± 0.1 2.5 ± 0.2 1.3 ± 0.2 0.4 C D 7343 7.3 ± 0.2 4.3 ± 0.2 2.4 ± 0.1 2.8 ± 0.2 1.3 ± 0.2 0.5 C (STANDARD C-V VALUE REFERENCE BY CASE CODE) DC Rated Voltage (Vdc) 16 20 25 35 0.47 P A2 A A 0.68 P A2 A A A A µF 2.5 4 6.3 1.0 P 3.3 P 4.7 J J 15 J, P P P 33 P 47 A 68 A2 J, P A2, A A J P, A2 A A A A, B2 A, B3 B2 J, P, A P, A2, A 6.8 100 A2 A P 2.2 22 J, P J, P J 1.5 10 10 A P, A2 A P, A2, A A2, A, B2 A, B3, B2 A2, A B3 B2 P, A2, A A, B3, B2 A, B3, B2 B2, C A A, B3 B2 A, B3 A, B3, B2, C B2, C B3 B2 B3, B2 B3, B2 B2, C B2 A A B2 B2 B2 C C C, D C D D C D C, D D 150 B2 B2 C D 220 B2 C C, D D 330 C C D 470 C, D D D 680 D D D C, D C C D at 85°C 2.5 4 6.3 10 16 20 25 35 V 2.5 4 6.3 10 16 20 25 35 V at 125°C 1.6 2.5 4 6.3 10 13 16 22 V at 85°C 3.3 5.2 8 13 20 26 33 46 V Capacitance (at 20°C, 120 Hz) Range: 0.47 µF to 680 µF Tolerance: ± 20%, (±10%) Capacitance change with temperature Not to exceed −12% at −55°C, +12% at 85°C, and +15% at 125°C Tangent of loss angle (at 20°C, 120 Hz) (Standard) 0.047 µF to 4.7 µF: less than 0.04 6.8 µF to 68 µF: less than 0.06 (Extended) (1) 2.5 Vdc to 10 Vdc: less than 0.08 16 Vdc to 35 Vdc: less than 0.06 DC leakage current (at 20°C) 0.01 C•V (2) µA or 0.5 µA, whichever is greater Damp heat (90 to 95% RH at 40°C, 56 days (1344 h)) Capacitance change: ±5% (±12%) (3) Tangent of loss angle: 150% of initial requirements DC leakage current: initial requirements Endurance (at 85°C, DC rated voltage, 2000 h) Capacitance change: ±10% (±12%) (3) Tangent of loss angle: initial requirements DC leakage current: 125% of initial requirements Resistance to soldering heat (solder reflow at 260°C, 10 s. or solder dip at 260°C, 5 s.) Capacitance change: +5% (+12%) (3) Leakage current: initial requirements Tangent of loss angle: initial requirements NEC obtained IEC Qualification Approval on R Series Standard Ratings in September 1987. 1. Refer to standard ratings for tangent of loss angle of the following items: 4 V/22 µF, 6.3 V/15 µF products in A2 case. 2.5 V/47 µF, 68 µF, 4 V/33 µF, 47 µF, 6.3 V/22 µF, 33 µF, 47 µF, 10 V/22 µF, 16 V/10 µ F products in A case. 2.5 V/100 µF, 4 V/47 µF, 68 µF, 100 µF, 6.3 V/22 µF, 33 µF, 47 µF, 10V/15 µF, 22 µF, 16 V/10 µF products in B3 case. 2.5 V/150 µF, 220 µF, 4 V/100 µF, 150 µF, 6.3 V/68 µF, 100 µF products in B2 case. 2.5 V/470 µF, 4 V/470 µF, 680 µF, 6.3 V/220 µF, 330 µF, 470 µF, 10 V/150 µF, 220 µF, 16V/100 µF products in D case. 2. Product of capacitance in µF and voltage in V. 3. Capacitance change of ± 12% applies to 4 V/22 µF, 6.3 V/6.8 µF to 15 µF, 10 V/3.3 µF to 10 µF, 16 V/2.2 µF products in A2 case; 2.5 V/47 µF, 68 µF, 4 V/22 µF to 47 µF, 6.3 V/10 µF to 47 µF, 10 V/4.7 µF to 22 µF, 16 V/3.3 µF to 6.8 µF, 20 V/2.2 µF to 4.7 µF, 25 V/2.2 µF, 35 V/1 µF, 1.5 µF products in A case; 2.5 V/100 µF to 150 µF, 4 V/100 µF, 6.3 V/68 µF, 100 µF products in B2 case; 2.5 V/470 µF, 4 V/220 µF to 330 µF, 6.3 V/100 µF, 10 V/68 µF, 16 V/47 µF products in C case; 2.5 V/470 µF, 4 V/470 µF, 680 µF, 6.3 V/220 µF, 330 µF, 470 µF, 10 V/150 µF, 220 µF,16 V/100 µF products in D case. Capacitance change of ±15% applies to all products with the B3 case. See pages 25 and 26 for taping specifications. EC0171EJUV0SG00 5

ブランド

NEC

現況

NECエレクトロニクスは平成14年にNECから、ルネサスは平成15年に日立製作所及び三菱電機からそれぞれ分離独立する形で設立された半導体専業企業であり両者は合併した。

現ブランド

RENESAS

会社名

ルネサス エレクトロニクス株式会社

本社国名

日本

事業概要

2010年(平成22年)4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ&ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI

供給状況

 
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