BC556, B, C
BC557, A, B, C
BC558, A, B, C
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES PNP Transistor
TO-92
Power dissipation
PCM:
0.625
W (Tamb=25℃)
Collector current
- 0.1
A
ICM:
Collector-base voltage
BC556
-80
V
VCBO:
BC557
-50
V
BC558
-30
V
Operating and storage junction temperature range
1
2
3
1 2 3
1. COLLECTOR
2. BASE
TJ, Tstg: -55℃ to +150℃
3 . EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless
Symbol
Collector-base breakdown voltage
otherwise
Test
specified)
conditions
VCBO
Ic= -100µA , IE=0
-50
BC558
Collector-emitter breakdown voltage
BC556
VCEO = - 2mA , IB=0
I E= -100µA, IC=0
V
-6
VCB= -70V, IE=0
BC556
BC557
-45
-30
VEBO
Emitter-base breakdown voltage
ICBO
µA
VCB= -25V, IE=0
BC556
V
-0.1
VCB= -45 V, IE=0
BC558
VCE= -60 V, IB=0
BC557
ICEO
VCE= -40 V, IB=0
-0.1
µA
VCE= -25 V, IB=0
BC558
Emitter cut-off current
V
-65
BC558
Collector cut-off current
UNIT
-30
BC557
Collector cut-off current
MAX
-80
BC556
BC557
MIN
BC556
BC557
IEBO
VEB= -5V, IC=0
-0.1
µA
BC558
DC current gain
BC556
BC557
BC558
BC557A/558A
BC556B/BC557B/BC558B
BC556C/BC557C/BC558C
120
120
120
120
180
420
500
800
800
220
460
800
hFE(1)
VCE=-5V, IC= -2mA
Collector-emitter saturation voltage
VCE(sat)
I C=-100 mA, IB= -5mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
I C= -100 mA, IB=-5mA
-1
V
Transition frequency
fT
VCE= -5V, IC= -10mA
f = 100MHz
150
MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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