DATA SHEET
MOS INTEGRATED CIRCUIT
μPD442012A-X
2M-BIT CMOS STATIC RAM
128K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The μPD442012A-X is a high speed, low power, 2,097,152 bits (131,072 words by 16 bits) CMOS static RAM.
The μPD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The μPD442012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
• 131,072 words by 16 bits organization
• Fast access time : 50, 55, 70, 85 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Low voltage operation
(BB version : VCC = 2.7 to 3.6 V, BC version : VCC = 2.2 to 3.6 V)
• Low VCC data retention : 1.0 V (MIN.)
• Operating ambient temperature : TA = –25 to +85 °C
• Output Enable input for easy application
• Two Chip Enable inputs : /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
Supply current
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μA (MAX.)
μA (MAX.)
μPD442012A-BCxxX
, 55, 70, 85
4
2
70, 85
2.7 to 3.6
2.2 to 3.6
−25 to +85
30
Note 3
40
50
Note 2
35
μPD442012A-BBxxX
Note 1
voltage
Note 4
30
Notes 1. VCC ≥ 3.0 V
2. Cycle time ≥ 70 ns
3. Cycle time = 55 ns
4. Cycle time = 50 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M14671EJAV0DS00 (10th edition)
Date Published November 2008
Printed in Japan
2000
