TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
Qualified Level
JAN
JANTX
JANTXV
2N2060
2N2060L
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
100
7.0
500
Vdc
Vdc
Vdc
mAdc
One
Both
Section Sections
Total Power Dissipation
@ TA = +250C (1)
540
600
PT
@ TC = +250C (2)
1.5
2.12
Operating & Storage Junction Temperature Range
-65 to +200
TJ, Tstg
0
0
0
1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
mW
W
0
C
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CER
80
Vdc
V(BR)CEO
60
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
RBE ≤ 10 Ω, IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ICBO
10
2.0
µAdc
ηAdc
IEBO
10
2.0
µAdc
ηAdc
120101
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