MOTOROLA
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by MMBV3700LT1/D
SEMICONDUCTOR TECHNICAL DATA
High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching applications but are
also suitable for use in general–purpose switching circuits. They are supplied in a
cost–effective plastic package for economical, high–volume consumer and industrial
requirements. They are also available in surface mount.
MMBV3700LT1
MPN3700
SILICON PIN
SWITCHING DIODES
• Long Reverse Recovery Time
trr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
3
• Low Series Resistance @ 100 MHz
RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
1
• Reverse Breakdown Voltage = 200 V (Min)
2
3
Cathode
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
Anode
SOT–23
2
Cathode
1
Anode
TO–92
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
VR
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
MPN3700
MMBV3700LT1
200
Unit
PD
280
2.8
Vdc
200
2.0
mW
mW/°C
TJ
Junction Temperature
Storage Temperature Range
+125
°C
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV3700LT1 = 4R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
200
—
—
Vdc
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
—
—
1.0
pF
Series Resistance (Figure 5)
(IF = 10 mAdc)
RS
—
0.7
1.0
Ω
Reverse Leakage Current
(VR = 150 Vdc)
IR
—
—
0.1
µAdc
Reverse Recovery Time
(IF = IR = 10 mAdc)
trr
—
300
—
ns
Characteristic
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
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