BF256A/BF256B/BF256C
BF256A/BF256B/BF256C
N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
30
Units
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
10
mA
PD
Total Device Dissipation @TA=25°C
Derate above 25°C
350
2.8
mW
mW/°C
TSTG
Operating and storage Temperature Range
- 55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
-0.5
-7.5
V
-0.5
-8
V
-5
nA
7
13
18
mA
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
VDS = 0, IG = 1µA
-30
VGS
VDS = 15V, ID = 200µA
Gate-Source
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15V, ID = 10nA
IGSS
Gate Reverse Current
VGS = -20V, VGS = 0
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
BF256A
BF256B
BF256C
VGS = 15V, VGS = 0
3
6
11
VDS = 15V, VGS = 0, f = 1KHz
4.5
V
Small Signal Characteristics
gfs
Common Source Forward Transconductance
©2003 Fairchild Semiconductor Corporation
mmhos
Rev. A, June 2003
