2N3820
2N3820
P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 89.
TO-92
1
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Ratings
-20
Units
V
VGS
Gate-Source Voltage
20
V
IGF
Forward Gate Current
10
mA
TSTG
Storage Temperature Range
-55 ~ 150
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
V(BR)GSS
Gate-Source Breakdwon Voltage
IG = 10µA, VDS = 0
IGSS
Gate Reverse Current
VGS = 10V, VDS = 0
20
20
nA
V
VGS(off)
Gate-Source Cutoff Voltage
VDS = -10V, ID = -10µA
8.0
V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current *
VDS = -10V, VGS = 0
-0.3
-15
mA
800
Small Signal Characteristics
gfs
Forward Transfer Conductance
VDS = -10V, VGS = 0, f = 1.0KHz
5000
µmhos
Ciss
Input Capacitance
VDS = -10V, VGS = 0, f = 1.0KHz
32
pF
Crss
Reverse Transfer Capacitance
VDS = -10V, VGS = 0, f = 1.0KHz
16
pF
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
350
2.8
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002