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部品型式

MT29F64G08CBAAAWP:ATR

製品説明
仕様・特性

Micron Confidential and Proprietary Advance‡ 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47 compliant; see qualification report – Endurance: 3000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP – 100-ball BGA • Open NAND Flash Interface (ONFI) 2.3-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 8936 bytes (8192 + 744 bytes) – Block size: 256 pages (2048K + 186K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks • Synchronous I/O performance – Up to synchronous timing mode 52 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) • Array performance – Read page: 75µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 117). • RESET (FFh) required as first command after power-on PDF: 09005aef841b7a46 Rev. E 11/11 EN Notes: 1 1. The ONFI 2.3 specification is available at www.onfi.org. 2. BGA devices up to Synchronous timing mode 5. TSOP devices up to Synchronous timing mode 4. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. Draft: 11/18/11 MT29F64G08CBAB[A/B], MT29F128G08CFABA, MT29F128G08CFABB, MT29F256G08CJABA, MT29F256G08CJABB, MT29F64G08CBCBB, MT29F128G08CECBB, MT29F256G08C[K/M]CBB, MT29F512G08CUCBB,

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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